Apart From crystal quality, problems with the interface of SiC with silicon dioxide have hampered the development of SiC-based power MOSFETs and insulated-gate bipolar transistors. This is possible because they have a larger band width, enabling them to convert electricity with a lot less heat loss. A silicon semiconductor would https://www.quora.com/profile/Trevor-Flatcher-2/Silicon-Carbide-in-wind-power-equipment-applications-Silicon-Carbide-in-Wind-Power-Equipment-Applications-Silicon-Carb